外露光刻膠的研制是光刻膠研制過程中最關鍵的步驟之一，因此對研制過程及其參數(shù)(溫度、研制時間等)的選擇要特別注意。在噴淋顯影過程中，對每個基板分別進行單獨顯影，并在暴露區(qū)域連續(xù)噴淋新顯影劑或蝕刻劑，以防止顯影劑飽和。

SAWATEC開發(fā)人員可用于水坑或噴霧開發(fā)，在此過程中，根據(jù)應用程序的技術和經(jīng)濟標準選擇最佳流程。與水坑開發(fā)相比，噴霧開發(fā)的優(yōu)點是可以釋放非常小的精細結構。水坑法的優(yōu)點是，當襯底有較深的結構時，顯著較少的顯影液需要和較好的結果。

SMD系列用于清洗和顯影8英寸(200mm)以下的晶圓或6英寸(150x150mm)以下的基板。過程——室工作Ø212毫米。

由SAWATEC公司開發(fā)的SMD具有良好的工藝性能、低的化學消耗和可靠的重復性，甚至具有較厚的光刻膠層。由于操作簡便，易于清洗，這些儀器是理想的適合于實驗室，研發(fā)，研究所和試點項目。

該儀器可作為臺式或移動式機柜。

功能(基本配置)

FEATURES (BASIC CONFIGURATION)

§ Up to 50 programmes with 24 segments each can be programmed

§ Quick start function for repeat processes

§ User-friendly process configuration with touch screen panel

§ Process parameter: speed, acceleration, process time, speed of the spray arm, developing spray time

§ Electrical driven spray arm, with dynamic or static function

§ Developer line and media tank (2 litre) for one developer included

§ Nozzle for DI-water-rinse and N2 drying on the spray arm

§ Nozzles in the process bowl for the backside rinse

§ Control elements for dosing of the compressed air and vacuum

§ Rotational direction can be selected (CW, CCW)

§ Manual loading and unloading of the substrates

Mechanical substrate fixation

§ Acoustic signal when the process has finished

PERFORMANCE DATA

§ Speed range: 0 to 3’000rpm +/-1rpm 1)

§ Speed acceleration: 0 to 3’000rpm in 0.3 seconds 1)

§ Process time up to 2376 seconds

§ Developer spray time 99 seconds/segment

§ Speed of the spray arm 10 to 200mm/seconds

§ Rinse and N2 drying 99 seconds/segment

§ Heatable process hood up to 50°C

§ Spray nozzle made of PEEK 0,8mm

ADDITIonAL FUNCTIONS (OPTIONS)

§ Additional developer lines (up to 4 developer lines possible)

§ Start/stop foot switch for ease of operation (cable length 1.8m)

§ Separation unit for media exhaust (tank and laboratory equipment)

§ Developer tank heating system (2 litre)

§ Spray nozzle made of PEEK (0,3 / 0,5mm)

§ Nozzle for puddle developing